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| PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA 3N60P IXTP 3N60P IXTY 3N60P VDSS ID25 RDS(on) = 600 = 3.0 2.9 V A Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Weight Test Conditions TJ = 25 C to 150 C TJ = 25 C to 150 C; RGS = 1 M Continuous Transient TC = 25 C TC = 25 C, pulse width limited by TJM TC = 25 C TC = 25 C TC = 25 C IS IDM, di/dt 100 A/s, VDD VDSS TJ 150 C, RG = 30 TC = 25 C Maximum Ratings 600 600 30 40 3.0 6 3 10 100 5 70 -55 ... +150 150 -55 ... +150 V V V V A A A mJ mJ V/ns W C C C C C g g g TO-263 (IXTA) G S (TAB) TO-220 (IXTP) G DS (TAB) TO-252 (IXTY) 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s TO-220 TO-263 TO-252 300 260 4 3 0.35 G S G = Gate S = Source (TAB) D = Drain TAB = Drain Features l Symbol Test Conditions (TJ = 25 C unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 50 A VGS = 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125 C Characteristic Values Min. Typ. Max. 600 3.0 5.5 100 5 50 2.9 V V nA A A International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect l l Advantages l l l Easy to mount Space savings High power density VGS = 10 V, ID = 0.5 ID25, Note 1 (c) 2006 IXYS All rights reserved DS99449E(04/06) IXTA 3N60P IXTP 3N60P IXTY 3N60P Symbol Test Conditions Characteristic Values (TJ = 25 C unless otherwise specified) Min. Typ. Max. 2.2 3.4 411 VGS = 0 V, VDS = 25 V, f = 1 MHz 44 6.4 25 VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 RG = 30 (External) 25 58 22 9.8 VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 3.4 3.5 S pF pF pF ns ns ns ns nC nC nC 1.80 C/W (TO-220) 0.25 CW Pins: 1 - Gate 3 - Source 2 - Drain 4 - Drain TO-220 (IXTP) Outline gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS VDS= 20 V; ID = 0.5 ID25, Note 1 Source-Drain Diode Symbol IS ISM VSD trr Test Conditions VGS = 0 V Repetitive IF = IS, VGS = 0 V, Note 1 IF = 3 A, -di/dt = 100 A/s VR = 100 V, VGS = 0 V Characteristic Values TJ = 25 C unless otherwise specified) Min. Typ. Max. 3 9 1.5 500 A A V ns TO-252 (IXTY) Outline Note 1: Pulse test, t 300 s, duty cycle d 2 % TO-263 (IXTA) Outline Pins: 1 - Gate 4 - Drain Dim. A A1 A2 b b1 b2 c c1 D D1 E E1 e e1 H L L1 L2 L3 Millimeter Min. Max. 2.19 0.89 0 0.64 0.76 5.21 0.46 0.46 5.97 4.32 6.35 4.32 2.38 1.14 0.13 0.89 1.14 5.46 0.58 0.58 6.22 5.21 6.73 5.21 3 - Source Inches Min. 0.086 0.035 0 0.025 0.030 0.205 0.018 0.018 0.235 0.170 0.250 0.170 Max. 0.094 0.045 0.005 0.035 0.045 0.215 0.023 0.023 0.245 0.205 0.265 0.205 2.28 BSC 4.57 BSC 9.40 10.42 0.51 1.02 0.64 0.89 2.54 1.02 1.27 2.92 0.090 BSC 0.180 BSC 0.370 0.020 0.025 0.035 0.100 0.410 0.040 0.040 0.050 0.115 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6771478 B2 IXTA 3N60P IXTP 3N60P IXTY 3N60P Fig. 1. Output Characteristics @ 25C 3 2.7 2.4 2.1 VGS = 10V 8V 7V 6 5.5 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 0 1 2 3 4 5 6 7 8 9 10 0 3 6 9 12 15 18 21 24 27 30 6V VGS = 10V 8V Fig. 2. Extended Output Characteristics @ 25C I D - Amperes 1.8 1.5 1.2 0.9 0.6 0.3 0 6V V D S - Volts Fig. 3. Output Characteristics @ 125C 3 2.7 2.4 VGS = 10V 8V 7V 3.1 2.8 VGS = 10V I D - Amperes 7V V D S - Volts Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature I D - Amperes 2.1 1.8 1.5 1.2 0.9 0.6 0.3 0 0 2 4 6 5V 6V R D S ( o n ) - Normalized 2.5 2.2 1.9 1.6 1.3 1 0.7 0.4 I D = 3A I D = 1.5A V D S - Volts 8 10 12 14 16 18 20 -50 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 6. Drain Current vs. Case Tem perature 3.3 3 Fig. 5. RDS(on) Norm alized to 0.5 ID25 Value vs. ID 3 2.8 2.6 VGS = 10V TJ = 125 C 2.7 2.4 R D S ( o n ) - Normalized 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0 1 2 3 4 5 6 TJ = 25 C I D - Amperes 2.1 1.8 1.5 1.2 0.9 0.6 0.3 0 -50 -25 0 25 50 75 100 125 150 I D - Amperes (c) 2006 IXYS All rights reserved TC - Degrees Centigrade IXTA 3N60P IXTP 3N60P IXTY 3N60P Fig. 7. Input Adm ittance 4.5 4 3.5 6 5.5 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 4 4.5 5 5.5 6 6.5 7 0.5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 TJ = -40 C 25 C 125 C Fig. 8. Transconductance 2.5 2 1.5 1 TJ =125 C 25 C -40 C V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage 9 8 7 10 9 8 7 VDS = 300V I D = 1.5A I G = 10mA g f s - Siemens I D - Amperes 3 I D - Amperes Fig. 10. Gate Charge I S - Amperes 6 VG S - Volts TJ = 125 C TJ = 25 C 5 4 3 2 1 0 0.4 0.5 0.6 0.7 0.8 0.9 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 V S D - Volts Fig. 11. Capacitance 1000 10.0 Q G - nanoCoulombs Fig. 13. Maxim um Transient Therm al Resistance Capacitance - picoFarads C iss 100 R( t h ) J C - C / W C oss 10 C rss f = 1MHz 1 0 5 10 15 20 25 30 35 40 1.0 0.1 0.1 1 10 100 1000 V D S - Volts IXYS reserves the right to change limits, test conditions, and dimensions. Pulse Width - milliseconds |
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